LPDDR3 (Low Power DDR3) RAM went mainstream this year, with handsets like the Galaxy S4, Galaxy Note 3 and other high end smartphones such as the Nexus 5 adopting the technology. Yet Samsung isn’t willing to stop there, the South Korean giant today unveiled the first 8-gigabit (1GB) low-power DDR4 memory chip based on ’20-nm class’ transistor process.
The Low Voltage Swing Terminated Logic (LVSTL) I/O interface found on those chip would theoretically allow the transmission of data at 3,200Mbp/s, thus making increased bandwidths possible and subsequently decrease application execution time. The technology will induce a slight increase in battery life and make higher resolution displays on future smartphones a possibility, at least on paper.
The new LPDDR4 interface will also provide 50% higher performance than the fastest LPDDR3 or DDR3 memory while consuming approximately 40% less energy at 1.1 volts. Stacked together in a multi-layered design, four 8Gb (1GB) chips would combine to offer a single 4GB LPDDR4 package which would eventually be mass produced later in 2014, just in time for the company’s next-generation mobile devices and tablets with Ultra HD displays.
The Galaxy Note 3 already was deemed overkill for its time with that whopping 3GB of LPDDR3 RAM – But hang on, it’ll get even better next year! We’ll surely see Samsung’s new LPDRR4 chips in the next line of high-end Galaxy smartphones. From the looks of it, the Galaxy S5 and the next Galaxy Note will very likely sport 4GB of RAM coupled with Samsung next Exynos SoC that will reportedly feature Samsung’s own implementation of AArch64.
via Samsung Tomorrow